Many-Tier Vertical Gate-All-Around Nanowire FET Standard Cell Synthesis for Advanced Technology Nodes
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
سال: 2021
ISSN: 2329-9231
DOI: 10.1109/jxcdc.2021.3089095